EXAMINATION OF STACKING AND TECHNOLOGICAL FAULTS IN SILICON BY SCANNING ELECTRON-MICROSCOPY

被引：0

|

作者：

LATYSHENKO, VF ^{[1
]}

SHEIKHET, EG ^{[1
]}

SHAKHOVTSOV, VI ^{[1
]}

机构：

[1] ZAPOROZHE IND INST, ZAPOROZHE, UKRAINE, USSR

来源：

UKRAINSKII FIZICHESKII ZHURNAL | 1986年 / 31卷 / 10期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

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页码：1579 / 1582

页数：4

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