DEEP LEVEL TRANSIENT SPECTROSCOPY STUDIES OF N-CDTE AND P-CDTE

被引：4
|
作者：
LEE, WI
TASKAR, NR
GHANDHI, SK
BORREGO, JM
机构：
[1] Rensselaer Polytechnic Inst, United States
来源：
SOLAR CELLS | 1988年 / 24卷 / 3-4期
关键词：
Semiconductor Devices - Junctions;
D O I：
10.1016/0379-6787(88)90079-8
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Deep level transient spectroscopy is used for determining defect levels in n- and p-type CdTe grown by metal-organic chemical vapor deposition. In n-type CdTe the defect levels were determined on Schottky diodes. The main majority carrier trap levels were associated with tellurium and cadmium vacancies and cadmium interstitials. p-n junctions were used for determining defect levels in p-CdTe where an electron trap and a hole trap were observed.
引用
收藏
页码：279 / 286
页数：8
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