10000-HOUR CONTINOUS CW OPERATION OF INGAASP-INP HETEROSTRUCTURE LASERS WITH A BUFFER LAYER AT ROOM-TEMPERATURE

被引：3
|
作者：
NODA, Y
SAKAI, K
MATSUSHIMA, Y
AKIBA, S
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 05期
关键词：
D O I：
10.1143/JJAP.20.997
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：997 / 998
页数：2
相关论文
共 50 条
  • [31] Continuous room-temperature operation of optically pumped InGaAs/InGaAsP microdisk lasers
    Thiyagarajan, SMK
    Levi, AFJ
    Lin, CK
    Kim, I
    Dapkus, PD
    Pearton, SJ
    ELECTRONICS LETTERS, 1998, 34 (24) : 2333 - 2334
  • [32] Room temperature operation of InGaAs/InGaAsP/InP quantum dot lasers grown by MOCVD
    Lee, IC
    Lee, SH
    Kim, HD
    Jeong, WG
    Kim, NJ
    Hwang, MS
    Lee, D
    Lee, JH
    Oh, DK
    Stevenson, R
    Dapkus, PD
    COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS, 2005, 184 : 105 - 108
  • [33] ROOM-TEMPERATURE CW OPERATION OF INGAASP/INGAP LASERS AT 727 NM GROWN ON GAAS SUBSTRATES BY LIQUID-PHASE EPITAXY
    WAKAO, K
    NISHI, H
    KUSUNOKI, T
    ISOZUMI, S
    OHSAKA, S
    APPLIED PHYSICS LETTERS, 1984, 44 (11) : 1035 - 1037
  • [34] 680 NM CW OPERATION AT ROOM-TEMPERATURE BY ALGAAS DOUBLE HETEROJUNCTION LASERS
    YAMAMOTO, S
    HAYASHI, H
    HAYAKAWA, T
    MIYAUCHI, N
    YANO, S
    HIJIKATA, T
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) : 1009 - 1015
  • [35] CW ROOM-TEMPERATURE OPERATION OF Y-JUNCTION SEMICONDUCTOR RING LASERS
    HOHIMER, JP
    CRAFT, DC
    HADLEY, GR
    VAWTER, GA
    ELECTRONICS LETTERS, 1992, 28 (04) : 374 - 375
  • [36] ROOM-TEMPERATURE OPERATION OF GAINASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MUM
    HSIEH, JJ
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1976, 66 (03) : 288 - 288
  • [37] CW INGAASP/INP INJECTION LASERS WITH VERY LOW THRESHOLD CURRENT DENSITY AT ROOM TEMPERATURE.
    Dolginov, L.M.
    Drakin, A.E.
    Eliseev, P.G.
    Sverdlov, B.N.
    Shevchenko, E.G.
    IEEE Journal of Quantum Electronics, 1984, QE-21 (06) : 646 - 649
  • [38] InP microdisk lasers on silicon wafer:: CW room temperature operation at 1.6μm
    Seassal, C
    Rojo-Romeo, P
    Letartre, X
    Viktorovitch, P
    Hollinger, G
    Jalaguier, E
    Pocas, S
    Aspar, B
    ELECTRONICS LETTERS, 2001, 37 (04) : 222 - 223
  • [39] Room temperature CW operation of (λ∼9μm) InP based quantum cascade lasers
    Forget, S
    Faugeras, C
    Duchemin, EB
    Bengloan, JY
    Sirtori, C
    Calligaro, M
    Parillaud, O
    Page, H
    Giovannini, M
    Faist, J
    SOLID STATE LASER TECHNOLOGIES AND FEMTOSECOND PHENOMENA, 2004, 5620 : 101 - 111
  • [40] VERY SHORT WAVELENGTH (621.4 NM) ROOM-TEMPERATURE PULSED OPERATION OF INGAASP LASERS
    FUJIMOTO, A
    YASUDA, H
    SHIMURA, M
    YAMASHITA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08): : L488 - L490
12345