PHENOMENOLOGICAL THEORY OF SOLITON FORMATION IN LIGHTLY-DOPED POLYACETYLENE

被引：68
|
作者：
RICE, MJ
MELE, EJ
机构：
来源：
SOLID STATE COMMUNICATIONS | 1980年 / 35卷 / 06期
关键词：
D O I：
10.1016/0038-1098(80)90254-9
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：487 / 491
页数：5
相关论文
共 50 条
  • [31] Anisotropic spin freezing in lightly-doped La2-xSrxCuO4
    Matsuda, M.
    Fujita, M.
    Takeda, M.
    Kakurai, K.
    Yamada, K.
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2010, 470 : S82 - S83
  • [32] Growth and electrical characterization of lightly-doped thick 4H-SiC epilayers
    Tsuchida, H
    Kamata, I
    Jikimoto, T
    Izumi, K
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 171 - 174
  • [33] SOLITON THEORY OF OPTICAL-ABSORPTION IN POLYACETYLENE
    KIVELSON, S
    LEE, TK
    PHYSICAL REVIEW LETTERS, 1983, 50 (07) : 550 - 550
  • [34] Composite structure of single-particle spectral function in lightly-doped Mott insulators
    Zhao, Jing-Yu
    Weng, Zheng-Yu
    Physical Review B, 2025, 111 (10)
  • [35] Growth and electrical characterization of lightly-doped thick 4H-SiC epilayers
    Tsuchida, H.
    Kamata, I.
    Jikimoto, T.
    Izumi, K.
    Materials Science Forum, 2002, 389-393 (01) : 171 - 174
  • [36] Noncoplanar spin canting in lightly-doped ferromagnetic Kondo lattice model on a triangular lattice
    Akagi, Yutaka
    Motome, Yukitoshi
    INTERNATIONAL CONFERENCE ON FRUSTRATION IN CONDENSED MATTER (ICFCM), 2011, 320
  • [37] Shadowing of lightly-doped drain implants due to gate etch profiles and implanter configurations
    Henis, N
    Abercrombie, D
    Brownson, R
    MICROELECTRONIC DEVICE AND MULTILEVEL INTERCONNECTION TECHNOLOGY II, 1996, 2875 : 169 - 177
  • [38] TEMPERATURE, INJECTION LEVEL, AND FREQUENCY DEPENDENCES OF LUMINESCENCE IN LIGHTLY-DOPED AND HEAVILY-DOPED CDTE-IN
    NORRIS, CB
    JOURNAL OF LUMINESCENCE, 1978, 16 (03) : 297 - 310
  • [39] POLYELECTROLYTIC THEORY OF DOPED POLYACETYLENE
    FUKUTOME, H
    TAKAHASHI, A
    SYNTHETIC METALS, 1986, 13 (1-3) : 135 - 147
  • [40] A MECHANISM OF CHARGED SOLITON CONDUCTION IN A DOPED POLYACETYLENE CHAIN
    FUKUTOME, H
    TAKAHASHI, A
    SYNTHETIC METALS, 1987, 19 (1-3) : 982 - 982
12345