OPTICAL ABSORPTION INDUCED BY A LASER PULSE IN II-VI SEMICONDUCTORS

被引:6
|
作者
KUBOTA, K
机构
关键词
D O I
10.1143/JPSJ.30.167
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:167 / &
相关论文
共 50 条
  • [41] MECHANISMS OF EXCIMER LASER-ASSISTED ETCHING AND DEPOSITION OF II-VI SEMICONDUCTORS
    BREWER, PD
    ZINCK, JJ
    OLSON, GL
    JENSEN, JE
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1989, 198 : 169 - COLL
  • [42] Modeling (001) surfaces of II-VI semiconductors
    Ahr, M
    Biehl, M
    Volkmann, T
    COMPUTER PHYSICS COMMUNICATIONS, 2002, 147 (1-2) : 107 - 110
  • [43] Nanobelt and nanosaw structures of II-VI semiconductors
    Ma, Christopher
    Moore, Daniel
    Ding, Yong
    Li, Jing
    Wang, Zhong Lin
    INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 2004, 1 (04) : 431 - 451
  • [44] EPITAXIAL PHOTOCHEMICAL DEPOSITION OF II-VI SEMICONDUCTORS
    IRVINE, SJC
    MULLIN, JB
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 2100 - 2105
  • [45] II-VI - SEMICONDUCTORS - PARTICULAR FEATURES AND APPLICATIONS
    LETRAON, JY
    ANNALES DES TELECOMMUNICATIONS-ANNALS OF TELECOMMUNICATIONS, 1988, 43 (7-8): : 378 - 391
  • [46] Calculations of electron mobility in II-VI semiconductors
    Vukmirovic, Nenad
    PHYSICAL REVIEW B, 2021, 104 (08)
  • [47] MECHANICAL AND CHEMOMECHANICAL TREATMENT OF II-VI SEMICONDUCTORS
    TOMASHIK, VN
    TOMASHIK, ZF
    INORGANIC MATERIALS, 1994, 30 (12) : 1396 - 1400
  • [48] PRECURSORS FOR II-VI SEMICONDUCTORS - REQUIREMENTS AND DEVELOPMENTS
    JONES, AC
    WRIGHT, PJ
    COCKAYNE, B
    JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 297 - 308
  • [49] DX centers in II-VI semiconductors and heterojunctions
    Thio, T
    Bennett, JW
    Chadi, DJ
    Linke, RA
    Tamargo, MC
    JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (02) : 229 - 233
  • [50] LIQUIDUS CALCULATION OF II-VI COMPOUND SEMICONDUCTORS
    KIKUCHI, R
    CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY, 1982, 6 (01): : 1 - 10