EVIDENCE OF ELECTRON TRAPPING IN UNDOPED HYDROGENATED AMORPHOUS-SILICON (A-SI-H) SCHOTTKY BARRIERS BY THE SURFACE PHOTOVOLTAGE (SPV) TECHNIQUE - A STUDY OF STABILITY IN A-SI-H SOLAR-CELLS

被引：1
|
作者：
LIN, HS [1 ]
机构：
[1] UNIV SCI & TECHNOL CHINA, DEPT PHYS, HEFEI, PEOPLES R CHINA
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1993年 / 30卷 / 04期
关键词：
D O I：
10.1016/0927-0248(93)90113-H
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Surface photovoltage (SPV) measurements on a-Si: H/metal Schottky devices under forward bias are presented. The space-charge density decreases with applied forward bias while both the space-charge width and the apparent diffusion length are essentially constant. These are all attributed to electron trapping in Schottky barrier region. Furthermore, we explore electron trapping effect in a-Si: H on light-induced degradation of a-Si: H solar cells.
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页码：367 / 374
页数：8
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