EVIDENCE OF ELECTRON TRAPPING IN UNDOPED HYDROGENATED AMORPHOUS-SILICON (A-SI-H) SCHOTTKY BARRIERS BY THE SURFACE PHOTOVOLTAGE (SPV) TECHNIQUE - A STUDY OF STABILITY IN A-SI-H SOLAR-CELLS

Surface photovoltage (SPV) measurements on a-Si: H/metal Schottky devices under forward bias are presented. The space-charge density decreases with applied forward bias while both the space-charge width and the apparent diffusion length are essentially constant. These are all attributed to electron trapping in Schottky barrier region. Furthermore, we explore electron trapping effect in a-Si: H on light-induced degradation of a-Si: H solar cells.