MULTIPLE PROTON ENERGY IRRADIATION FOR IMPROVED GTO THYRISTORS

被引：21
|
作者：
HALLEN, A
BAKOWSKI, M
LUNDQVIST, M
机构：
[1] SWEDISH INST MICROELECTR,S-16421 KISTA,SWEDEN
[2] UNIV UPPSALA,INST ELECTR,S-75121 UPPSALA,SWEDEN
来源：
SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 02期
关键词：
D O I：
10.1016/0038-1101(93)90131-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Proton irradiation using three proton energies and a variety of fluence combinations has been used to improve the trade-off between steady-state and turn-off losses for Gate Turn-Off (GTO) thyristors. Using a fluence of 9 . 10(10) cm-2 near the anode, 4 . 10(10) cm-2 in the middle of the device and 1 . 10(10) cm-2 close to the blocking junction, the tum-off energy is reduced by 50% relative to electron-irradiated standard components. The electrical results are consistent with the results of infrared free carrier absorption measurements performed on single GTO thyristor cells during both steady state and turn-off. The charge dynamics in selected regions of the thyristor is discussed and charge carrier lifetime is deduced by analytical methods for various proton fluence and energy combinations.
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页码：133 / 141
页数：9
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