INTERFACE STATES AT (111) HETEROJUNCTIONS

被引:8
|
作者
DJAFARIROUHANI, B [1 ]
DOBRZYNSKI, L [1 ]
FLORES, F [1 ]
LANOO, M [1 ]
TEJEDOR, C [1 ]
机构
[1] INST SUPER ELECTR N,CNRS,ETUD SURFACES & INTERFACES LAB,F-59046 LILLE,FRANCE
关键词
D O I
10.1016/0039-6028(79)90671-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:134 / 140
页数:7
相关论文
共 50 条
  • [41] Detection of interface states correlated with SiO2/Si(111) interface structures
    Watanabe, N
    Teramoto, Y
    Omura, A
    Nohira, H
    Hattori, T
    APPLIED SURFACE SCIENCE, 2000, 166 (1-4) : 460 - 464
  • [42] FERMI-LEVEL PINNING AND INTERFACE STATES AT PB-SI(111) INTERFACE
    OSSICINI, S
    BERNARDINI, F
    SOLID STATE COMMUNICATIONS, 1992, 82 (11) : 863 - 866
  • [43] Interface formation of Ge/ZnSe(100) and Ge/ZnS (111) heterojunctions studied by synchrotron radiation photoemission
    Ban, Da-yan
    Yang, Feng-yuan
    Fang, Rong-chuan
    Xu, Shi-hong
    Xu, Peng-shou
    Acta Physica Sinica, 1996, 5 (08):
  • [44] Interface formation of Ge/ZnSe(100) and Ge/ZnS(111) heterojunctions studied by synchrotron radiation photoemission
    Ban, DY
    Yang, FY
    Fang, RC
    Xu, SH
    Xu, PS
    ACTA PHYSICA SINICA-OVERSEAS EDITION, 1996, 5 (08): : 590 - 600
  • [45] Organic heterojunctions: Contact-induced molecular reorientation, interface states, and charge redistribution
    Opitz, Andreas
    Wilke, Andreas
    Amsalem, Patrick
    Oehzelt, Martin
    Blum, Ralf-Peter
    Rabe, Juergen P.
    Mizokuro, Toshiko
    Hoermann, Ulrich
    Hansson, Rickard
    Moons, Ellen
    Koch, Norbert
    SCIENTIFIC REPORTS, 2016, 6
  • [46] INFLUENCE OF INTERFACE STATES ON STATIC PARAMETERS OF GE-GAAS HETEROJUNCTIONS AT AVALANCHE BREAKDOWN
    DATIEV, KM
    ACTA PHYSICA ET CHEMICA, 1977, 23 (2-3): : 269 - 278
  • [47] Localized interface states in coherent isovalent semiconductor heterojunctions (vol 84, 125315, 2011)
    Popescu, Voicu
    Zunger, Alex
    PHYSICAL REVIEW B, 2011, 84 (11):
  • [48] Large Rashba unidirectional magnetoresistance in the Fe/Ge(111) interface states
    Guillet, T.
    Marty, A.
    Vergnaud, C.
    Jamet, M.
    Zucchetti, C.
    Isella, G.
    Barbedienne, Q.
    Jaffres, H.
    Reyren, N.
    George, J-M
    Fert, A.
    PHYSICAL REVIEW B, 2021, 103 (06)
  • [49] Atomic structure and interface states at CaF2/Si (111)
    Fujitani, Hideaki, 1600, (27):
  • [50] Electron states at a solid C-60/Si(111) interface
    Zhang, YX
    Chen, KM
    Qin, GG
    Wu, K
    Li, CY
    Jin, SX
    Gu, ZN
    Zhou, XH
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1996, 8 (45) : L691 - L696