ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF SCHOTTKY BARRIERS

被引：132
作者：
ALLEN, RE
DOW, JD
机构：
[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源：
PHYSICAL REVIEW B | 1982年 / 25卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.25.1423
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：1423 / 1426
页数：4
相关论文
共 37 条
[1]  
ALLEN R, UNPUB
[2]   GREEN-FUNCTIONS FOR SURFACE PHYSICS [J].
ALLEN, RE .
PHYSICAL REVIEW B, 1979, 20 (04) :1454-1472
[3]   GREENS-FUNCTION AND GENERALIZED PHASE-SHIFT FOR SURFACE AND INTERFACE PROBLEMS [J].
ALLEN, RE .
PHYSICAL REVIEW B, 1979, 19 (02) :917-924
[4]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[5]   SCHOTTKY-BARRIER HEIGHT OF AU ON N-GA1-XALXAS AS A FUNCTION OF ALAS CONTENT [J].
BEST, JS .
APPLIED PHYSICS LETTERS, 1979, 34 (08) :522-527
[6]   ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACES [J].
BRILLSON, LJ ;
BRUCKER, CF ;
STOFFEL, NG ;
KATNANI, AD ;
MARGARITONDO, G .
PHYSICAL REVIEW LETTERS, 1981, 46 (13) :838-841
[7]   (110) SURFACE-STATES OF GAAS - SENSITIVITY OF ELECTRONIC-STRUCTURE TO SURFACE-STRUCTURE [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1978, 18 (04) :1800-1812
[8]   ELECTRONIC STATES ON THE RELAXED (110) SURFACE OF GAAS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
SOLID STATE COMMUNICATIONS, 1979, 29 (03) :267-271
[9]   VACANCIES NEAR SEMICONDUCTOR SURFACES [J].
DAW, MS ;
SMITH, DL .
PHYSICAL REVIEW B, 1979, 20 (12) :5150-5156
[10]   ENERGY-LEVELS OF SEMICONDUCTOR SURFACE VACANCIES [J].
DAW, MS ;
SMITH, DL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1028-1031
1234