TEM AND SXES STUDY OF NI-SILICIDE/SI INTERFACE - CRYSTALLOGRAPHIC RELATIONSHIP WITH THE SI SUBSTRATES

被引：5
|
作者：
YAMAUCHI, S
HIRAI, M
KUSAKA, M
IWAMI, M
NAKAMURA, H
YOKOTA, Y
AKIYAMA, A
WATABE, H
机构：
[1] KURARAY CO LTD,CENT RES LABS,KURASHIKI 710,JAPAN
[2] MATSUSHITA ELECT IND CO LTD,CHUO KU,OSAKA 540,JAPAN
[3] OSAKA ELECTROCOMMUN UNIV,NEYAGAWA,OSAKA 572,JAPAN
[4] OKAYAMA UNIV SCI,MICROANAL RES CTR,OKAYAMA 700,JAPAN
来源：
APPLIED SURFACE SCIENCE | 1992年 / 60-1卷
关键词：
D O I：
10.1016/0169-4332(92)90446-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have analyzed the microstructure of Ni-silicides/Si(111) and (100) samples formed by heat-treating Ni(film)/Si(substrate) at 750-degrees-C for 30 min by means of soft X-ray emission spectroscopy (SXES). transmission electron microscopy (TEM) with cross-sectional mode and scanning electron microscopy (SEM) observation. Several differences appear between a sample on Si(111) and the one on Si(100) in view of Ni-silicides formation. It is worth describing that NiSi2 and Si are included in the NiSi layer grown on Si(111) and Si(100) substrate, respectively.
引用
收藏
页码：372 / 379
页数：8
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