SURFACE CONDUCTION IN SHORT-CHANNEL MOS DEVICES AS A LIMITATION TO VLSI SCALING

被引：56
|
作者：
EITAN, B [1 ]
FROHMANBENTCHKOWSKY, D [1 ]
机构：
[1] HEBREW UNIV JERUSALEM,SCH APPL SCI & TECHNOL,JERUSALEM 91000,ISRAEL
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 02期
关键词：
D O I：
10.1109/T-ED.1982.20693
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：254 / 266
页数：13
相关论文
共 50 条
  • [31] Short-channel effects of SOI partially-depleted (PD) dynamic-threshold MOS (DTMOS) devices
    Lin, SC
    Yuan, KH
    Kuo, JB
    2000 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, 2000, : 48 - 49
  • [32] Parameter extraction for a new analytical model of the short-channel MOS transistor
    Sevcenco, Andrei
    Boianceanu, Cristian
    UPB Scientific Bulletin, Series C: Electrical Engineering and Computer Science, 2014, 76 (02): : 131 - 144
  • [33] PARAMETER EXTRACTION FOR A NEW ANALYTICAL MODEL OF THE SHORT-CHANNEL MOS TRANSISTOR
    Sevcenco, Andrei
    Boianceanu, Cristian
    UNIVERSITY POLITEHNICA OF BUCHAREST SCIENTIFIC BULLETIN SERIES C-ELECTRICAL ENGINEERING AND COMPUTER SCIENCE, 2014, 76 (02): : 131 - 144
  • [34] BSIM - BERKELEY SHORT-CHANNEL IGFET MODEL FOR MOS-TRANSISTORS
    SHEU, BJ
    SCHARFETTER, DL
    KO, PK
    JENG, MC
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1987, 22 (04) : 558 - 566
  • [35] TABLE LOOKUP MOSFET CAPACITANCE MODEL FOR SHORT-CHANNEL DEVICES
    SHIMA, T
    IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1986, 5 (04) : 624 - 632
  • [36] PROPERTIES OF SHORT-CHANNEL DEVICES WITH THIN GATE OXIDES.
    Cheng, Y.C.
    Liu, B.Y.
    IEEE Transactions on Electron Devices, 1986, ED-33 (09) : 1305 - 1307
  • [37] MEASUREMENT AND MODELING OF SHORT-CHANNEL MOS-TRANSISTOR GATE CAPACITANCES
    SHEU, BJ
    KO, PK
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1987, 22 (03) : 464 - 472
  • [38] Compact Modeling and Short-Channel Effects of Nanowire MOS Transistors (Invited)
    Wong, Hei
    PROCEEDINGS OF 2018 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS, TECHNOLOGIES AND APPLICATIONS (ICTA 2018), 2018, : 7 - 10
  • [39] Two-dimensional analytical modelling of short-channel MOS transistors
    ElGhitani, H
    Sadik, S
    Shousha, AH
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1996, 81 (05) : 517 - 524
  • [40] VELOCITY SATURATION EFFECT ON SHORT-CHANNEL MOS TRANSISTOR CAPACITANCE.
    Iwai, H.
    Pinto, M.R.
    Rafferty, C.S.
    Oristian, J.E.
    Dutton, R.W.
    Electron device letters, 1985, EDL-6 (03): : 120 - 122
12345