SURFACE CONDUCTION IN SHORT-CHANNEL MOS DEVICES AS A LIMITATION TO VLSI SCALING

被引：56
|
作者：
EITAN, B [1 ]
FROHMANBENTCHKOWSKY, D [1 ]
机构：
[1] HEBREW UNIV JERUSALEM,SCH APPL SCI & TECHNOL,JERUSALEM 91000,ISRAEL
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 02期
关键词：
D O I：
10.1109/T-ED.1982.20693
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：254 / 266
页数：13
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