DISORDER-INDUCED BROADENING FOR FREE DIRECT EXCITONS IN II-VI AND III-V SEMICONDUCTING MIXED-CRYSTALS

被引：12
|
作者：
HENNIG, D [1 ]
STREHLOW, R [1 ]
机构：
[1] ACAD SCI GDR,ZENT INST ELEKTR PHYS,DDR-108 BERLIN,GER DEM REP
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1981年 / 107卷 / 01期
关键词：
D O I：
10.1002/pssb.2221070129
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：283 / 288
页数：6
相关论文
共 50 条
  • [21] ON MECHANISM FOR DISORDER-INDUCED LATTICE-RELAXATION IN MIXED-CRYSTALS
    WANG, YL
    GU, ZQ
    HUANG, K
    KEXUE TONGBAO, 1982, 27 (01): : 18 - 23
  • [22] Disorder-induced effects in III-V semiconductors with Mn
    Masek, J
    Máca, F
    ACTA PHYSICA POLONICA A, 2002, 102 (4-5) : 667 - 672
  • [23] THERMOELECTRIC-POWER OF III-V TERNARY MIXED-CRYSTALS
    AHUJA, G
    GUPTA, HC
    TIWARI, LM
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1983, 52 (12) : 4283 - 4285
  • [24] Recombination and spin dynamics of excitons in III-V/II-VI:Mn heterovalent double quantum wells
    Toropov, A. A.
    Terent'ev, Ya. V.
    Ivanov, S. V.
    Kop'ev, P. S.
    Koyama, T.
    Nishibayashi, K.
    Murayama, A.
    Oka, Y.
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 1299 - +
  • [25] ELECTRONIC CONTRIBUTION TO DYNAMICAL SCREENING IN THEORY OF EXCITONS IN III-V AND II-VI SEMICONDUCTORS WITH ZINCBLENDE STRUCTURE
    EKARDT, W
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 65 (01): : 381 - 395
  • [26] Exciton broadening and spin dynamics in III-V/II-VI:Mn heterovalent double quantum wells
    Toropov, A. A.
    Terent'ev, Ya. V.
    Kop'ev, P. S.
    Ivanov, S. V.
    Koyama, T.
    Nishibayashi, K.
    Murayama, A.
    Oka, Y.
    Golnik, A.
    Gaj, J. A.
    PHYSICAL REVIEW B, 2008, 77 (23):
  • [27] BAND-STRUCTURE OF III-V AND II-VI SUPERLATTICES
    BERROIR, JM
    BRUM, JA
    SUPERLATTICES AND MICROSTRUCTURES, 1987, 3 (03) : 239 - 245
  • [28] OPTICAL PHYSICS IN III-V II-VI SEMICONDUCTOR SUPERLATTICES
    NURMIKKO, AV
    ACTA POLYTECHNICA SCANDINAVICA-ELECTRICAL ENGINEERING SERIES, 1989, (64): : 378 - 397
  • [29] Shift of the photoemission threshold in III-V and II-VI semiconductors
    Karpushin, A. A.
    Sorokin, A. N.
    JETP LETTERS, 2014, 99 (06) : 329 - 332
  • [30] Transitivity of the band offsets in II-VI/III-V heterojunctions
    Rubini, S
    Milocco, E
    Sorba, L
    Franciosi, A
    JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 178 - 182
12345