TUNNELING STUDY OF LOCALIZED STATES IN RESERVED REGION OF SB-DOPED SI

被引：2
|
作者：
SUZUKI, M [1 ]
KAWATA, S [1 ]
机构：
[1] SAGA UNIV,FAC EDUC,SAGA 840,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 01期
关键词：
D O I：
10.1143/JJAP.20.291
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：291 / 292
页数：2
相关论文
共 50 条
  • [41] Role of Intragap States in Sensitized Sb-Doped Tin Oxide Photoanodes for Solar Fuels Production
    Berardi, Serena
    Benazzi, Elisabetta
    Marchini, Edoardo
    Cristino, Vito
    Argazzi, Roberto
    Boaretto, Rita
    Gobbato, Thomas
    Rigodanza, Francesco
    Cerullo, Giulio
    Bozzini, Benedetto
    Bonchio, Marcella
    Prato, Maurizio
    Berger, Thomas
    Caramori, Stefano
    ACS APPLIED MATERIALS & INTERFACES, 2024, 16 (21) : 27209 - 27223
  • [42] Influence of thermal annealing on the electrical and luminescent properties of heavily Sb-doped Ge/Si(001) layers
    Yurasov, D., V
    Novikov, A., V
    Baidakova, N. A.
    Morozova, E. E.
    Yunin, P. A.
    Shengurov, D., V
    Antonov, A., V
    Drozdov, M. N.
    Krasilnik, Z. F.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (12)
  • [43] Effect of texture on the structural and transport properties of Sb-doped Mg2Si thin films
    Prahoveanu, Codrin
    Lacoste, Ana
    de Vaulx, Cedric
    Azzouz, Kamel
    Salaun, Mathieu
    Liu, Yanqing
    Tainoff, Dimitri
    Bourgeois, Olivier
    Laversenne, Laetitia
    JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 688 : 195 - 201
  • [44] Thermoelectric Properties of Sb-Doped Mg2Si Prepared Using Different Silicon Sources
    Yukihiro Isoda
    Satoki Tada
    Hiroyuki Kitagawa
    Yoshikazu Shinohara
    Journal of Electronic Materials, 2016, 45 : 1772 - 1778
  • [45] Solid-State Synthesis and Thermoelectric Properties of Sb-Doped Mg2Si Materials
    M. Ioannou
    G. Polymeris
    E. Hatzikraniotis
    A. U. Khan
    K. M. Paraskevopoulos
    Th. Kyratsi
    Journal of Electronic Materials, 2013, 42 : 1827 - 1834
  • [46] MICROSCOPIC STUDY OF TUNNELING PROCESSES VIA LOCALIZED STATES IN AMORPHOUS-SI/SIOX TUNNEL BARRIERS
    NAITO, M
    BEASLEY, MR
    PHYSICAL REVIEW B, 1987, 35 (05): : 2548 - 2551
  • [47] Thermoelectric properties of Sb-doped Mg2Si prepared by solid-state synthesis
    Department of Materials Science and Engineering, Chungju National University, Chungbuk, 380-702, Korea, Republic of
    IOP Conf. Ser. Mater. Sci. Eng., SYMPOSIUM 9C
  • [48] Evolution of E-centers during the annealing of Sb-doped Si0.8Ge0.2
    Kilpelainen, S.
    Tuomisto, F.
    Slotte, J.
    Hansen, J. Lundsgaard
    Larsen, A. Nylandsted
    PHYSICAL REVIEW B, 2011, 83 (09)
  • [49] Thermoelectric Properties of Sb-Doped Mg2Si Prepared Using Different Silicon Sources
    Isoda, Yukihiro
    Tada, Satoki
    Kitagawa, Hiroyuki
    Shinohara, Yoshikazu
    JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (03) : 1772 - 1778
  • [50] Effect　of　Growth　Parameters　on　Core　Length　of　Φ76．2mm　Heavily　Sb－doped　Si　Crystals
    曾世铭
    何林
    王君毅
    常青
    许江华
    RARE METALS, 1995, (02) : 150 - 153
12345