EFFECT OF CHARGED IMPURITIES ON DISLOCATION MOBILITY IN CRYSTALS HAVING HIGH PEIERLS BARRIERS

被引：0

作者：

PETUKHOV, BV ^{[1
]}

POKROVSK.VL ^{[1
]}

机构：

[1] ACAD SCI USSR, CRYSTALLO INST, MOSCOW, USSR

来源：

SOVIET PHYSICS SOLID STATE,USSR | 1972年 / 13卷 / 12期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：3105 / 3106

页数：2

共 50 条

[21] EFFECT OF HIGH HYDROSTATIC-PRESSURE ON DISLOCATION MOBILITY IN NACL-CRYSTALS
ZAITSEV, VI
BARBASHOV, VI
TKACHENKO, YB
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 44 (01): : K39 - K41
[22] EFFECT OF IMPURITIES ON DISLOCATION DENSITY IN ALKALI-HALIDE CRYSTALS
CHOLOKOV, KS
GRISHUKOV, VA
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1969, (08): : 152 - +
[23] Effect of charged dislocation walls on mobility in GaN epitaxial layers
S. E. Krasavin
Semiconductors, 2012, 46 : 598 - 601
[24] Effect of charged dislocation walls on mobility in GaN epitaxial layers
Krasavin, S. E.
SEMICONDUCTORS, 2012, 46 (05) : 598 - 601
[25] EFFECT OF NEUTRON RADIATION ON DISLOCATION MOBILITY IN LIF CRYSTALS
URUSOVSK.AA
PERZHINO.M
SOVIET PHYSICS SOLID STATE,USSR, 1969, 10 (10): : 2487 - &
[26] EFFECT OF ANNEALING ON DISLOCATION MOBILITY IN IRRADIATED LIF CRYSTALS
BERZINA, IG
GUSEV, EB
SHASKOLS.MP
SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (10): : 2410 - &
[27] EFFECT OF HIGH HYDROSTATIC-PRESSURE ON DISLOCATION MOBILITY IN KCL SINGLE-CRYSTALS
BARBASHOV, VI
CRYSTAL RESEARCH AND TECHNOLOGY, 1981, 16 (01) : K4 - K6
[28] Spatial correlation effects of charged impurities on electron mobility in delta-doped quantum barriers
Koenraad, PM
Shi, JM
vandeStadt, AFW
Smets, A
Devreese, JT
Wolter, JH
Peeters, FM
Perenboom, JAAJ
SUPERLATTICES AND MICROSTRUCTURES, 1997, 21 (02) : 237 - 240
[29] NUMERICAL-SIMULATION OF DISLOCATION-MOTION IN DISORDERED CRYSTALS WITH A HIGH PEIERLS RELIEF
VINOKUR, VM
SAGDEEV, IR
FIZIKA TVERDOGO TELA, 1988, 30 (09): : 2717 - 2723
[30] NONCONSERVATIVE DISLOCATION MOTION IN THE ZONE OF BRITTLE FRACTURE OF CRYSTALS WITH A HIGH PEIERLS BARRIER.
Alekhin, V.P.
Kuvaldin, D.A.
Physics and chemistry of materials treatment, 1987, 21 (01): : 95 - 99

← 1 2 3 4 5 →