INGAASP-INP BH LASERS ON P-TYPE INP SUBSTRATES

被引：3

作者：

NAKANO, Y ^{[1
]}

TAKAHEI, K ^{[1
]}

NOGUCHI, Y ^{[1
]}

NAGAI, H ^{[1
]}

NAWATA, K ^{[1
]}

TOKUNAGA, M ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,YOKOSUKA ELECT COMMUN LABS,YOKOSUKA,KANAGAWA 23803,JAPAN

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 18期

关键词：

D O I：

10.1049/el:19810453

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：645 / 646

页数：2

共 50 条

[21] FABRICATION AND CHARACTERIZATION OF NARROW STRIPE INGAASP-INP BURIED HETEROSTRUCTURE LASERS
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[22] ANALYSIS OF INTRINSIC SATURABLE ABSORPTION IN INGAASP-INP DIODE-LASERS
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[24] ELECTROABSORPTION IN INGAASP-INP DOUBLE HETEROSTRUCTURES
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[25] TEMPERATURE SENSITIVE THRESHOLD CURRENT OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS
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[28] LIGHT SATURATION OF INGAASP-INP LEDS
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[29] TEMPERATURE-DEPENDENCE OF THRESHOLD AND ELECTRICAL CHARACTERISTICS OF INGAASP-INP DH LASERS
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[30] TEMPERATURE CHARACTERISTICS OF THRESHOLD CURRENT IN INGAASP-INP DOUBLE-HETEROSTRUCTURE LASERS
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