IN-SITU UV-VISIBLE AND INFRARED ELLIPSOMETRY STUDY OF THE INFLUENCE OF SILANE DILUTION ON THE GROWTH OF HYDROGENATED AMORPHOUS-SILICON

被引：0

作者：

SHIRAI, H ^{[1
]}

DREVILLON, B ^{[1
]}

LAYADI, N ^{[1
]}

CABARROCAS, PRI ^{[1
]}

机构：

[1] TOKYO INST TECHNOL, GRAD SCH NAGATSUTA, MIDORI KU, YOKOHAMA, KANAGAWA 227, JAPAN

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1993年 / 164卷

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The initial stages of hydrogenated amorphous silicon growth from the RF glow discharge decomposition of pure silane and mixtures of silane with H-2 or He has been studied using UV-visible and infrared ellipsometry. The substrate as well as the gas phase conditions strongly influence the early stages of a-Si:H growth. As compared to pure silane conditions, when using H-2 or He dilution of silane, thicker films must be deposited for SIH bonding to become dominant with respect to SiH2. Moreover, in the case of high deposition rates from silane-helium mixtures, the SiH2 band increases with film thickness, indicating that, contrary to low deposition rate conditions, SiH2 is present in the bulk of the film.

引用

页码：119 / 122

页数：4

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