EPR-SPECTRA OF IRRADIATED N-TYPE SILICON-CARBIDE

被引：0
|
作者：
PAVLOV, NM
KOSAGANO.MG
SOLOMATI.VN
IGLITSYN, MI
BARINOV, YV
机构：
来源：
SOVIET PHYSICS SOLID STATE,USSR | 1972年 / 13卷 / 09期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：2363 / +
页数：1
相关论文
共 50 条
  • [31] ANNEALING STUDY IN ELECTRON-IRRADIATED N-TYPE SILICON
    TAUKE, RV
    FARADAY, BJ
    JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) : 5009 - &
  • [32] ELECTRICALLY ACTIVE INTERSTITIAL DEFECTS IN IRRADIATED N-TYPE SILICON
    LITVINKO, AG
    MAKARENKO, LF
    MURIN, LI
    TKACHEV, VD
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (04): : 455 - 457
  • [33] POSITRON DIAGNOSTICS OF DEFECTS IN NEUTRON-IRRADIATED SILICON-CARBIDE
    GIRKA, AI
    KULESHIN, VA
    MOKRUSHIN, AD
    MOKHOV, EN
    SVIRIDA, SV
    SHISHKIN, AV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (07): : 790 - 793
  • [34] LCAO ANALYSIS OF DISLOCATION-RELATED EPR-SPECTRA IN DEFORMED SILICON
    KISIELOWSKIKOMMERICH, C
    STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989, 1989, 104 : 187 - 192
  • [35] EPR-SPECTRA OF SPACE-HAMPERED SILICON-CONTAINING PHENOXYLS
    KLIMOV, ES
    MUSLIN, DV
    LYAPINA, NS
    SHAPKOV, AV
    OKHLOBYSTIN, OY
    TEORETICHESKAYA I EKSPERIMENTALNAYA KHIMIYA, 1992, 28 (01): : 67 - 72
  • [36] LCAO ANALYSIS OF DISLOCATION-RELATED EPR-SPECTRA IN DEFORMED SILICON
    KISIELOWSKIKOMMERICH, C
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (104): : 187 - 192
  • [37] Positron lifetime studies on 8 MeV electron-irradiated n-type 6H silicon carbide
    Lam, CH
    Lam, TW
    Ling, CC
    Fung, S
    Beling, CD
    Hang, DS
    Weng, HM
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (46) : 8409 - 8419
  • [38] Electropolishing of n-type 3C-polycrystalline silicon carbide
    Ballarin, N.
    Carraro, C.
    Maboudian, R.
    Magagnin, L.
    ELECTROCHEMISTRY COMMUNICATIONS, 2014, 40 : 17 - 19
  • [39] RAMAN SCATTERING FROM ELECTRONIC EXCITATIONS IN N-TYPE SILICON CARBIDE
    COLWELL, PJ
    KLEIN, MV
    PHYSICAL REVIEW B, 1972, 6 (02): : 498 - &
  • [40] Backside Nickel Based Ohmic Contacts to n-type Silicon Carbide
    Ghandi, R.
    Lee, H-S.
    Domeij, M.
    Zetterling, C-M.
    Ostling, M.
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 635 - 638
12345