PHOSPHORUS AND ARSENIC DOPING OF EPITAXIAL SILICON FILMS IN 1000 DEGREES TO 1200 DEGREES C TEMPERATURE RANGE

被引：16
|
作者：
SWANSON, TB
TUCKER, RN
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 09期
关键词：
D O I：
10.1149/1.2412296
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：1271 / &
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