PHOSPHORUS AND ARSENIC DOPING OF EPITAXIAL SILICON FILMS IN 1000 DEGREES TO 1200 DEGREES C TEMPERATURE RANGE

被引：16

|

作者：

SWANSON, TB

TUCKER, RN

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1969年 / 116卷 / 09期

关键词：

D O I：

10.1149/1.2412296

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：1271 / &

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