TIN-DOPED N+ INP AND GAINAS GROWN BY ATMOSPHERIC-PRESSURE MOCVD

被引：5
|
作者：
PINZONE, CJ
GERRARD, ND
DUPUIS, RD
HA, NT
LUFTMAN, HS
机构：
来源：
ELECTRONICS LETTERS | 1989年 / 25卷 / 19期
关键词：
D O I：
10.1049/el:19890880
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1315 / 1317
页数：3
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