INTERFACE PROPERTIES OF HIGH BARRIER HEIGHT MIS DIODES ON INP

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作者：
LEE, YS
ANDERSON, WA
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来源：
FIRST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS FOR ADVANCED ELECTRONIC AND OPTICAL DEVICES | 1989年 / 1144卷
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：217 / 223
页数：7
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