OPTICAL MIXING IN EPITAXIAL LIFT-OFF PSEUDOMORPHIC HEMTS

被引：7

作者：

BHATTACHARYA, D ^{[1
]}

BAL, PS ^{[1
]}

FETTERMAN, HR ^{[1
]}

STREIT, D ^{[1
]}

机构：

[1] TRW CO INC,DIV ELECTR SYST & TECHNOL,ELECTR SYST GRP,REDONDO BEACH,CA 90278

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 10期

关键词：

D O I：

10.1109/68.466580

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we present optical mixing in epitaxial lift-off (ELO) pseudomorphic HEMT's (PHEMT's) at difference frequencies in the microwave regime up to 22 GHz. The 3 mu m gate length AlGaAs-InGaAs PHEMT's were lifted off their host GaAs substrates and subsequently attached to quartz slides. It was observed that the ELO devices consistently resulted in stronger signals (similar to 7 dB) than the non-ELO devices under frontside and backside illumination, This is attributed to improved optical coupling efficiency, a decrease in substrate leakage, and an illumination-induced back gating effect for the ELO films.

引用

页码：1171 / 1173

页数：3

共 50 条

[21] OPTICAL SINGLE LAYER LIFT-OFF PROCESS
MORITZ, H
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) : 672 - 676
[22] Epitaxial lift-off of single crystalline CuI thin films
Storm, Philipp
Selle, Susanne
von Wenckstern, Holger
Grundmann, Marius
Lorenz, Michael
JOURNAL OF MATERIALS CHEMISTRY C, 2022, 10 (11) : 4124 - 4127
[23] Lift-off of epitaxial GaN by regrowth over nanoporous GaN
Kang, Jin-Ho
Lee, June Key
Ryu, Sang-Wan
JOURNAL OF CRYSTAL GROWTH, 2012, 361 : 103 - 107
[24] Fabrication and spectroscopy of GaN microcavities made by epitaxial lift-off
Xiong, C.
Rizzi, F.
Bejtka, K.
Edwards, P. R.
Gu, E.
Dawson, M. D.
Martin, R. W.
Watson, I. M.
SUPERLATTICES AND MICROSTRUCTURES, 2010, 47 (01) : 129 - 133
[25] Applications for Epitaxial Lift-Off of III-V Materials
Stender, C. L.
Youtsey, C.
Tuminello, F.
Osowski, M.
Adams, J.
Elarde, V.
Miyamoto, H.
Wibowo, A.
Hillier, G.
Tatavarti, R.
Pan, N.
2014 LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES (LEC), 2014,
[26] A diffusion and reaction related model of the epitaxial lift-off process
van Niftrik, A. T. J.
Schermer, J. J.
Bauhuis, G. J.
Mulder, P.
Larsen, P. K.
Kelly, J. J.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (11) : D629 - D635
[27] Epitaxial lift-off of single crystalline CuI thin films
Storm, Philipp
Selle, Susanne
von Wenckstern, Holger
Grundmann, Marius
Lorenz, Michael
Journal of Materials Chemistry C, 2022, 10 (11): : 4124 - 4227
[28] Epitaxial lift-off technology of GaAs multijunction solar cells
Knyps, P.
Dumiszewska, E.
Kaszub, W.
Przewloka, A.
Strupinski, W.
ELECTRON TECHNOLOGY CONFERENCE 2016, 2016, 10175
[29] Epitaxial lift-off for controllable single-crystalline perovskites
Peng, Dengfeng
Liu, Xianhu
Pan, Caofeng
SCIENCE BULLETIN, 2021, 66 (01) : 6 - 8
[30] Lift-off of silicon epitaxial layers for solar cell applications
Weber, KJ
Catchpole, K
Stocks, M
Blakers, AW
CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997, 1997, : 107 - 110

← 1 2 3 4 5 →