OPTICAL MIXING IN EPITAXIAL LIFT-OFF PSEUDOMORPHIC HEMTS

被引：7
|
作者：
BHATTACHARYA, D [1 ]
BAL, PS [1 ]
FETTERMAN, HR [1 ]
STREIT, D [1 ]
机构：
[1] TRW CO INC,DIV ELECTR SYST & TECHNOL,ELECTR SYST GRP,REDONDO BEACH,CA 90278
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 10期
关键词：
D O I：
10.1109/68.466580
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we present optical mixing in epitaxial lift-off (ELO) pseudomorphic HEMT's (PHEMT's) at difference frequencies in the microwave regime up to 22 GHz. The 3 mu m gate length AlGaAs-InGaAs PHEMT's were lifted off their host GaAs substrates and subsequently attached to quartz slides. It was observed that the ELO devices consistently resulted in stronger signals (similar to 7 dB) than the non-ELO devices under frontside and backside illumination, This is attributed to improved optical coupling efficiency, a decrease in substrate leakage, and an illumination-induced back gating effect for the ELO films.
引用
收藏
页码：1171 / 1173
页数：3
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