HIGH-TEMPERATURE SUPERCONDUCTIVE DEVICES ON SAPPHIRE

被引：20
|
作者：
LIANG, GC [1 ]
WITHERS, RS [1 ]
COLE, BF [1 ]
NEWMAN, N [1 ]
机构：
[1] UNIV CALIF BERKELEY,DEPT MAT SCI,BERKELEY,CA 94720
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1994年 / 42卷 / 01期
基金：
美国国家航空航天局;
关键词：
D O I：
10.1109/22.265525
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The low-loss and uniform dielectric properties of sapphire make it attractive for high-performance microwave devices using high-temperature superconductors. YBa2Cu3O7-delta films have been deposited on oxide-buffered 5-cm-diameter wafers and demonstrated a surface resistance of 0.5 mOMEGA at 10 GHz and 77 K. Long (9-ns) delay lines have for the first time been produced on these substrates and have a measured insertion loss of 1.5 dB at 6 GHz and 77 K. Design techniques appropriate for the dielectric anisotropy of sapphire are discussed.
引用
收藏
页码：34 / 40
页数：7
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