INTERACTION OF THALLIUM WITH RADIATION DEFECTS IN SILICON

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作者：
STAS, VF
CHISTOKHIN, IB
GERASIMENKO, NN
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1990年 / 24卷 / 03期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：320 / 323
页数：4
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