DIFFUSED EPITAXIAL GAALAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR FOR HIGH-FREQUENCY OPERATION

被引：33

|

作者：

ANKRI, D

SCAVENNEC, A

BESOMBES, C

COURBET, C

HELIOT, F

RIOU, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 09期

关键词：

D O I：

10.1063/1.93271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：816 / 818

页数：3

相关论文

共 50 条

[31] AIGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR CIRCUITS WITH IMPROVED HIGH-SPEED PERFORMANCE
CHANG, MF
ASBECK, PM
WANG, KC
SULLIVAN, GJ
MILLER, DL
ELECTRONICS LETTERS, 1986, 22 (22) : 1173 - 1174
[32] A HIGH-GAIN ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN ON SILICON SUBSTRATE
LIU, W
KIM, SD
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (9A): : 2656 - 2659
[33] SUBMICRON ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR PROCESS WITH HIGH-CURRENT GAIN
LEE, WS
ENOKI, T
YAMAHATA, S
MATSUOKA, Y
ISHIBASHI, T
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (120): : 329 - 334
[34] LUMP PARTITIONING OF IC BIPOLAR-TRANSISTOR MODELS FOR HIGH-FREQUENCY APPLICATIONS
CHAN, NN
DUTTON, RW
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1985, 4 (02) : 143 - 149
[35] HIGH LINEARITY POWER X-BAND GAINP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR
LIU, W
KIM, T
IKALAINEN, P
KHATIBZADEH, A
IEEE ELECTRON DEVICE LETTERS, 1994, 15 (06) : 190 - 192
[36] LOW-FREQUENCY NOISE IN SELF-ALIGNED GAINP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR
PLANA, R
GRAFFEUIL, J
DELAGE, SL
BLANCK, H
DIFORTEPOISSON, MA
BRYLINSKI, C
CHARTIER, E
ELECTRONICS LETTERS, 1992, 28 (25) : 2354 - 2356
[37] High-frequency heterojunction bipolar transistor device design and technology
Houston, PA
ELECTRONICS & COMMUNICATION ENGINEERING JOURNAL, 2000, 12 (05): : 220 - 228
[38] THE CHALLENGE OF GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR INTEGRATED-CIRCUIT TECHNOLOGY
YUAN, HT
ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS, 1989, 144 : 637 - 645
[39] REDISTRIBUTION OF ZN IN GAAS-ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURES
HOBSON, WS
PEARTON, SJ
JORDAN, AS
APPLIED PHYSICS LETTERS, 1990, 56 (13) : 1251 - 1253
[40] SELF ALIGNMENT STRUCTURE FOR NPN GAAS HETEROJUNCTION MICROWAVE BIPOLAR-TRANSISTOR
SU, LM
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65): : 423 - 430

← 1 2 3 4 5 →