ON THE THEORY OF GAAS-BASED QUANTUM-WELLS WITH EXTERNAL DELTA-DOPING

被引：4
|
作者：
CHICO, L
JASKOLSKI, W
PEREZALVAREZ, R
GARCIAMOLINER, F
机构：
[1] UNIV HABANA,DEPT FIS TEOR,HAVANA,CUBA
[2] NICHOLAS COPERNICUS UNIV,INST FIS,PL-87100 TORUN,POLAND
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 1993年 / 5卷 / 49期
关键词：
D O I：
10.1088/0953-8984/5/49/009
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The electron gas confined in GaAs/AlxGa1-xAs quantum wells delta-doped in the barriers has been self-consistently studied in an effective-mass model. In agreement with experimental evidence, our calculations show how the limitations in 2D electron density found in modulation-doped structures can be overcome with the delta-doping technique. The role of different structural parameters of these systems in the practical outcome is also discussed.
引用
收藏
页码：9069 / 9076
页数：8
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