DISPLACED MAXWELLIAN CALCULATION OF TRANSPORT IN N-TYPE GAAS

被引：28
|
作者：
HEINLE, W
机构：
来源：
PHYSICAL REVIEW | 1969年 / 178卷 / 03期
关键词：
D O I：
10.1103/PhysRev.178.1319
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1319 / +
页数：1
相关论文
共 50 条
  • [31] Photoacoustic investigation of the carrier transport processes and the thermal properties in n-type GaAs
    Lim, JT
    Choi, JG
    Bak, YH
    Park, SH
    Kim, U
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1997, 31 (04) : 608 - 612
  • [32] LOW-TEMPERATURE ELECTRON-TRANSPORT IN N-TYPE SI AND GAAS
    MEYER, JR
    BARTOLI, FJ
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 459 - 459
  • [33] Temperature dependence of galvanomagnetic properties of undoped n-type GaAs/GaAs and n-type InGaAs/InP layers
    Wolkenberg, A.
    PrzesLawski, T.
    Regiński, K.
    Kaniewski, J.
    Electron Technology, 2002, 34
  • [34] Unique characteristics of nonequilibrium carrier transport dynamics in an undoped GaAs/n-type GaAs epitaxial structure
    Hasegawa, Takayuki
    Nakayama, Masaaki
    APPLIED PHYSICS EXPRESS, 2016, 9 (07)
  • [35] COMPARISON OF MICROWAVE VELOCITY/FIELD CHARACTERISTICS OF N-TYPE INP AND N-TYPE GAAS
    LAM, HT
    ACKET, GA
    ELECTRONICS LETTERS, 1971, 7 (24) : 722 - +
  • [36] CALCULATION OF HOT-ELECTRON MOBILITY AND ELECTRON-TEMPERATURE IN N-TYPE INSB UNDER ASSUMPTION OF MAXWELLIAN DISTRIBUTION
    KOMISSAROV, VS
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1976, 76 (01): : 105 - 112
  • [37] CHARACTERIZATION OF N-TYPE GAAS EPILAYERS ON SEMIINSULATING GAAS SUBSTRATES
    BOTHA, AF
    ENGELBRECHT, JAA
    WATTERS, VJ
    SOUTH AFRICAN JOURNAL OF SCIENCE, 1991, 87 (09) : 453 - 456
  • [38] GROWTH OPTIMIZATION OF N-TYPE GAAS ON GAAS(201) SUBSTRATES
    WILLIAMS, JP
    WESTWOOD, DI
    SOBIESIERSKI, Z
    AUBREY, JE
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (01) : 612 - 614
  • [39] HOT-ELECTRON TRANSPORT IN SELECTIVELY DOPED N-TYPE ALGAAS/GAAS HETEROJUNCTIONS
    HIRAKAWA, K
    SAKAKI, H
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) : 803 - 808
  • [40] Charge and spin transport over record distances in GaAs metallic n-type nanowires
    Hijazi, H.
    Paget, D.
    Monier, G.
    Gregoire, G.
    Leymarie, J.
    Gil, E.
    Cadiz, F.
    Robert-Goumet, C.
    Andre, Y.
    PHYSICAL REVIEW B, 2021, 103 (19)
12345