ALGAAS/GAAS HBT FOR HIGH-TEMPERATURE APPLICATION - COMMENT

被引：1
|
作者：
YUAN, JS
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 09期
关键词：
D O I：
10.1109/16.231583
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1717 / 1717
页数：1
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