DEFECTS IN SEMICONDUCTOR CRYSTALS AFTER EXPOSURE TO HIGH-ENERGY ELECTRONS

被引：0

作者：

ASTAKHOV, VM ^{[1
]}

ASEEV, AL ^{[1
]}

PCHELYAKOV, OP ^{[1
]}

KHEIDENRAIKH, I ^{[1
]}

KESTNER, G ^{[1
]}

KHEEL, D ^{[1
]}

机构：

[1] ACAD SCI GDR,INST SOLID STATE & ELECTRON MICROSCOPY,DDR-108 BERLIN,GER DEM REP

来源：

IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA | 1980年 / 44卷 / 06期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1242 / 1246

页数：5

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