DEFECTS IN SEMICONDUCTOR CRYSTALS AFTER EXPOSURE TO HIGH-ENERGY ELECTRONS

被引：0
|
作者：
ASTAKHOV, VM [1 ]
ASEEV, AL [1 ]
PCHELYAKOV, OP [1 ]
KHEIDENRAIKH, I [1 ]
KESTNER, G [1 ]
KHEEL, D [1 ]
机构：
[1] ACAD SCI GDR,INST SOLID STATE & ELECTRON MICROSCOPY,DDR-108 BERLIN,GER DEM REP
来源：
IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA | 1980年 / 44卷 / 06期
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D O I：
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：1242 / 1246
页数：5
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