CALCULATED BAND STRUCTURES, OPTICAL-CONSTANTS AND ELECTRONIC CHARGE DENSITIES FOR INAS AND INSB

被引：11
|
作者：
DEALVAREZ, CV
WALTER, JP
BOYD, RW
COHEN, ML
机构：
[1] UNIV CALIF, DEPT PHYS, BERKELEY, CA 94720 USA
[2] LAWRENCE BERKELEY LAB, INORG MAT RES DIV, BERKELEY, CA 94720 USA
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1973年 / 34卷 / 02期
关键词：
D O I：
10.1016/0022-3697(73)90093-0
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：337 / 345
页数：9
相关论文
共 50 条
  • [21] Effects of nitriding on surface charge densities in anodic oxide-InAs structures
    Slavnikov V.S.
    Nesmelov N.S.
    Slavnikova M.M.
    Potselueva L.P.
    Russian Physics Journal, 1999, 42 (1) : 125 - 125
  • [22] ELECTRONIC CHARGE-DENSITIES IN SEMICONDUCTING LAYER AND CHAIN STRUCTURES
    MOOSER, E
    SCLUTER, IC
    SCHLUTER, M
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1974, 35 (09) : 1269 - 1284
  • [23] STRUCTURAL AND ELECTRONIC-PROPERTIES OF NARROW-BAND-GAP SEMICONDUCTORS - INP, INAS, AND INSB
    MASSIDDA, S
    CONTINENZA, A
    FREEMAN, AJ
    DEPASCALE, TM
    MELONI, F
    SERRA, M
    PHYSICAL REVIEW B, 1990, 41 (17): : 12079 - 12085
  • [24] ELECTRONIC BAND STRUCTURES AND UNOCCUPIED DENSITIES OF STATES FOR LU COMPOUNDS
    TAKEGAHARA, K
    PHYSICA B-CONDENSED MATTER, 1993, 186-88 : 850 - 852
  • [25] OPTICAL-CONSTANTS OF PURE AND HEAVILY DOPED SILICON AND GERMANIUM - ELECTRONIC INTERBAND-TRANSITIONS
    VINA, L
    CARDONA, M
    PHYSICA B & C, 1983, 117 (MAR): : 356 - 358
  • [26] OPTICAL-CONSTANTS AND ELECTRONIC CHARACTERISTICS OF IRON-COBALT ALLOYS IN THE SOLID AND LIQUID STATES
    GUSHCHIN, VS
    SHVAREV, KM
    BAUM, BA
    RUSSIAN METALLURGY, 1982, (06): : 41 - 44
  • [27] Optical properties and electronic structures in InAs/GaAs quantum dots
    Jung, JH
    Im, HC
    Kim, JH
    Kim, TW
    Kwack, KD
    Yoo, KH
    Kim, MD
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 : S622 - S625
  • [28] Ab initio study of electronic and magneto-optical properties of InSb:Mn and InAs:Mn
    Kulatov, E.
    Titov, A.
    Uspenskii, Yu.
    MAGNETISM AND MAGNETIC MATERIALS V, 2012, 190 : 113 - +
  • [29] PSEUDOPOTENTIAL CALCULATIONS OF BAND-STRUCTURE AND ELECTRONIC CHARGE DENSITIES IN MODEL GERMANIUM
    DEALVARE.CV
    COHEN, ML
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1972, 17 (01): : 26 - &
  • [30] Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model
    Samajdar, D. P.
    Dhar, S.
    SCIENTIFIC WORLD JOURNAL, 2014,
12345