RAMAN-SCATTERING STUDIES OF BONDING DEFECTS IN SI

被引:0
|
作者
TSU, R [1 ]
机构
[1] ENERGY CONVERS DEVICES INC,TROY,MI 48084
来源
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:454 / 454
页数:1
相关论文
共 50 条
  • [21] NMR AND RAMAN-SCATTERING STUDIES OF MBBA AND EBBA
    YUSUNIWA, M
    TAKI, S
    TAKEMURA, T
    MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 1980, 60 (1-2): : 111 - 131
  • [22] INSITU RAMAN-SCATTERING STUDIES OF INTERCALATION KINETICS
    OLK, CH
    EKLUND, PC
    CARBON, 1984, 22 (02) : 216 - 216
  • [23] STUDIES OF RESONANT RAMAN-SCATTERING IN POLYDIACETYLENE FILMS
    ZHENG, LX
    BENNER, RE
    VARDENY, ZV
    BAKER, GL
    SYNTHETIC METALS, 1991, 41 (1-2) : 235 - 238
  • [24] THE BUILDUP OF STIMULATED RAMAN-SCATTERING FROM SPONTANEOUS RAMAN-SCATTERING
    MOSTOWSKI, J
    RAYMER, MG
    OPTICS COMMUNICATIONS, 1981, 36 (03) : 237 - 240
  • [25] BUILDUP OF STIMULATED RAMAN-SCATTERING FROM SPONTANEOUS RAMAN-SCATTERING
    RAYMER, MG
    BROPHY, C
    MOSTOWSKI, J
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (09): : 1150 - 1150
  • [26] ANISOTROPIC INTRODUCTION OF INTRINSIC DEFECTS IN GAAS MONITORED BY RAMAN-SCATTERING
    BERG, RS
    MAVALVALA, N
    WARRINER, H
    BIN, Z
    PHYSICAL REVIEW B, 1989, 39 (09): : 6201 - 6204
  • [27] RAMAN-SCATTERING STUDIES OF CHEMICAL-VAPOR-DEPOSITED CUBIC SIC FILMS OF (100) SI
    FENG, ZC
    MASCARENHAS, AJ
    CHOYKE, WJ
    POWELL, JA
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) : 3176 - 3186
  • [28] STRUCTURAL STUDIES OF CRYSTALLINE AND AMORPHOUS SI-GE ALLOYS USING EXAFS AND RAMAN-SCATTERING
    MINOMURA, S
    TSUJI, K
    WAKAGI, M
    ISHIDATE, T
    INOUE, K
    SHIBUYA, M
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 541 - 544
  • [29] Raman-scattering assessment of Si+-implantation damage in InP
    Cusco, R
    Talamas, G
    Artus, L
    Martin, JM
    GonzalesDiaz, G
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (08) : 3927 - 3929
  • [30] RAMAN-SCATTERING OF SI LOCALIZED VIBRATIONAL-MODES IN INAS
    UEMATSU, M
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (03) : 1781 - 1783