GAAS GROWTH-PROPERTIES ON V-GROOVED SI SUBSTRATES

被引：15
|
作者：
HASHIMOTO, A
FUKUNAGA, T
WATANABE, N
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 11期
关键词：
D O I：
10.1063/1.100761
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：998 / 1000
页数：3
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