THIN METAL-FILM FORMATION USING ELECTROLESS PLATING

The process of thin nickel film formation using electroless plating is described. There are two mechanisms of metal deposition involved when a colloidal catalyst system is used to promote electroless plating on dielectric materials. The first mechanism governs the metal deposition on the active catalytic sites (island) until these islands merge and form a continuous metal film. The second mechanism is responsible exclusively for the metal growth from the continuous metal film. It is found that 55 A of Ni appear to be a minimum thickness for a perfectly continuous film which is sufficient to act as a plasma barrier in the oxygen magnetron-enhanced reactive ion etching environment. The experimental results are within reasonable agreement with the predicted values using a mathematical model. Both suggest that radii of active catalytic sites range from 5 to 17 angstrom.