ELECTRICAL BEHAVIOUR OF DEFECTS AT A THERMALLY OXIDIZED SILICON SURFACE

被引：0
|
作者：
WHELAN, MV
机构：
来源：
PHILIPS RESEARCH REPORTS | 1970年 / 06期
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：1 / &
相关论文
共 50 条
  • [31] CITATION CLASSIC - CHARACTERISTICS OF THE SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
    DEAL, BE
    CURRENT CONTENTS/ENGINEERING TECHNOLOGY & APPLIED SCIENCES, 1982, (22): : 20 - 20
  • [32] SURFACE MOBILITY OF HOLES IN THERMALLY OXIDIZED SILICON MEASURED BY THE FIELD EFFECT AND THE HALL EFFECT
    MURPHY, NSJ
    SURFACE SCIENCE, 1964, 2 : 86 - 92
  • [33] LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON
    CASTRO, PL
    DEAL, BE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 280 - +
  • [34] Schottky barrier height on thermally oxidized InAlN surface evaluated by electrical and optical measurements
    Kovac, J.
    Sramaty, R.
    Chvala, A.
    Sibboni, H.
    Morvan, E.
    DiForte-Poisson, M. A.
    Donoval, D.
    Kordos, P.
    APPLIED PHYSICS LETTERS, 2011, 98 (16)
  • [35] SURFACE PROPERTIES OF THERMALLY OXIDIZED GERMANIUM
    NOVOTOTS.YF
    SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (12): : 2805 - +
  • [36] RADIATION-INDUCED INCREASE IN SURFACE RECOMBINATION VELOCITY OF THERMALLY OXIDIZED SILICON STRUCTURES
    FITZGERA.DJ
    GROVE, AS
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (11): : 1601 - +
  • [37] LOW-TEMPERATURE REDUCTUION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON
    CASTRO, PL
    DEAL, BE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) : C97 - &
  • [38] STUDY OF THE SURFACE-PROPERTIES OF THERMALLY OXIDIZED SILICON USING SURFACE ACOUSTIC-WAVE ATTENUATION
    WEBSTER, RT
    ESTRADAVAZQUEZ, H
    DAS, P
    BHARAT, R
    SOLID-STATE ELECTRONICS, 1979, 22 (06) : 541 - +
  • [39] Effects of atomic-scale surface morphology on carbon nanotube alignment on thermally oxidized silicon surface
    Yamada, Kazuki
    Chiashi, Shohei
    Takahashi, Katsuhiro
    Homma, Yoshikazu
    APPLIED PHYSICS LETTERS, 2010, 96 (10)
  • [40] CHARGING OF A THERMALLY OXIDIZED GERMANIUM SURFACE
    KASHKARO.PK
    KISELEV, VF
    KOZLOV, SN
    NOVOTOTS.YF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (07): : 967 - 968
12345