VACANCY CREATION BY HELIUM TRAPPING AT SUBSTITUTIONAL KRYPTON IN TUNGSTEN

被引：47
|
作者：
VANVEEN, A
CASPERS, LM
KORNELSEN, EV
FASTENAU, R
VANGORKUM, A
WARNAAR, A
机构：
[1] DELFT UNIV TECHNOL,INTERUNIV REACTOR INST,DEPT APPL PHYS,DELFT,NETHERLANDS
[2] NATL RES COUNCIL CANADA,ELEKTR PHYS SECT,OTTAWA,ONTARIO,CANADA
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 40卷 / 01期
关键词：
D O I：
10.1002/pssa.2210400131
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：235 / 246
页数：12
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