ROOM-TEMPERATURE CW OPERATION AT 2.2-MU-M OF GAINASSB/ALGAASSB DIODE-LASERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：65
|
作者：
CHOI, HK
EGLASH, SJ
机构：
[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 10期
关键词：
D O I：
10.1063/1.105544
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Gain-guided Ga0.84In0.16As0.14Sb0.86/Al0.75Ga0.25As0.06Sb094 double-heterostructure lasers emitting at approximately 2.2-mu-m have been operated cw at heat sink temperatures up to 30-degrees-C. The maximum output powers obtained at 5 and 20-degrees-C were 10.5 and 4.6 mW/facet, respectively. For pulsed operation of broad-stripe lasers 300-mu-m wide and 1000-mu-m long, the threshold current density was as low as 940 A/cm2 the lowest room-temperature value reported for diode lasers emitting beyond 2-mu-m.
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页码：1165 / 1166
页数：2
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