ELECTRICAL PROPERTIES OF PROTON-BOMBARDED GA1-XALXAS

被引:15
|
作者
FAVENNEC, PN
DIGUET, D
机构
[1] CTR NATL ETUD TELECOMMUN,DEPT PMT,22301 LANNION,FRANCE
[2] RADIOTECHNIQUE COMPELEC,14000 CAEN,FRANCE
关键词
D O I
10.1063/1.1654743
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:546 / 547
页数:2
相关论文
共 50 条
  • [31] MULTIBARRIER TUNNELING IN GA1-XALXAS/GAAS HETEROSTRUCTURES
    VASSELL, MO
    LEE, J
    LOCKWOOD, HF
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5206 - 5213
  • [32] LEAKY TUBE ZINC DIFFUSION IN GA1-XALXAS
    AGENO, SK
    ROEDEL, RJ
    MELLEN, N
    ESCHER, JS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : C403 - C404
  • [33] TE AND GE DOPING STUDIES IN GA1-XALXAS
    SPRINGTH.AJ
    KING, FD
    JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (04) : 862 - 862
  • [34] ELECTRON-MOBILITY IN GA1-XALXAS ALLOYS
    SAXENA, AK
    PHYSICAL REVIEW B, 1981, 24 (06): : 3295 - 3302
  • [35] ETCHING OF PROTON-BOMBARDED NAF CRYSTAL
    KUBO, K
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (11) : 2411 - &
  • [36] Proton-bombarded GaP electrooptical sampling
    Jilin Univ, Changchun, China
    Hongwai Yu Haomibo Xuebao, 1 (26-30):
  • [37] EXCITED-STATES OF DX IN GA1-XALXAS
    VONBARDELEBEN, HJ
    BOURGOIN, JC
    DELERUE, C
    LANNOO, M
    PHYSICAL REVIEW B, 1991, 44 (16): : 9060 - 9063
  • [38] RELIABILITY OF GA1-XALXAS INJECTION-LASERS
    GOODWIN, AR
    HENSHALL, GD
    SELWAY, PR
    OHARA, S
    NEWMAN, D
    DOBSON, P
    JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (04) : 437 - 437
  • [39] CATHODOLUMINESCENCE INVESTIGATION OF GA1-XALXAS AT CRYOGENIC TEMPERATURES
    ROEDEL, RJ
    MYHAJLENKO, S
    EDWARDS, JL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (04) : 1186 - 1190
  • [40] Measurements of Ga1-xAlxAs layers on GaAs with EDS
    Rohrbacher, K
    Klein, P
    Andrae, M
    Wernisch, J
    MIKROCHIMICA ACTA, 1996, : 501 - 506