Effects of Impurity Redistribution on the Short-Circuit Current of n(+)-p Silicon Solar Cells

The effect of impurity redistribution on the n(+)-diffused layer of silicon solar cells has been studied. The impurity concentration was profiled by four-point-probe differential Hall and resistivity measurements. The electric field gradient and the mobility gradient in the diffused region were obtained from the impurity profiles. Short-circuit current was calculated from the effective recombination lifetime deduced from electric field gradient and mobility gradient results. The calculated short-circuit current was compared with measured values as a function of wavelengths and found to he in reasonably good agreement.