STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF SRTIO3 THIN-FILMS PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：60

作者：

YAMAGUCHI, H ^{[1
]}

LESAICHERRE, PY ^{[1
]}

SAKUMA, T ^{[1
]}

MIYASAKA, Y ^{[1
]}

ISHITANI, A ^{[1
]}

YOSHIDA, M ^{[1
]}

机构：

[1] NEC CORP LTD,ULSI DEVICE DEV LABS,SAGAMIHARA 229,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 9B期

关键词：

FERROELECTRIC THIN FILM; MOCVD; SRTIO3; DIELECTRIC CONSTANT; CAPACITOR;

D O I：

10.1143/JJAP.32.4069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SrTiO3 thin films were prepared on Si and Pt/TaO(x)/Si substrates by Sr(DPM)2/Ti(i-OC3H7)4/O2/Ar chemical vapor deposition (CVD), using a simple vaporizing-and-transport source delivery system. A thickness uniformity of +/-5.6% and a composition uniformity of +/-2.7% were obtained. The dielectric constant was 210 for 110 nm thick SrTiO3 films (Sr/(Sr+Ti) = 0.5) annealed at 600-degrees-C for 2 hours. An SiO2 equivalent thickness of 1.1 nm was obtained for 40 nm thick SrTiO3 films, and leakage current densities were 6 x 10(-8) angstrom/cm2 at 1.0 V and 5 x 10(-7) A/cm2 at 1.65 V. The structural and electrical properties were affected by the film composition.

引用

页码：4069 / 4073

页数：5

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