CONTROLLED P-TYPE AND N-TYPE DOPING OF HOMOEPITAXIALLY AND HETEROEPITAXIALLY GROWN INSB

The p- and n-type doping, with Be and Si, respectively, of InSb grown on InSb and GaAs substrates using molecular-beam epitaxy was investigated. Using secondary-ion-mass' spectrometry, an anomalous migration of Be toward the surface was observed for growth on InSb substrates when the substrate temperature exceeded 340-degrees-C. This migration was not observed for Be-doped InSb layers grown on GaAs substrates. This redistribution of dopants was also not observed for Si-doped InSb layers. The doping efficiency of Be in InSb was approximately one-half that measured for Be in GaAs. For the doping efficiency of Si in InSb to reach that for Si in GaAs, the substrate temperature had to be maintained at less-than-or-equal-to 340-degrees-C during growth. Using the low-temperature growth technique, Si delta-doped structures were grown which demonstrated two-dimensional electron gas behavior.