TEMPERATURE-DEPENDENCE OF THE HALL-EFFECT IN SILICON DOPED BY IMPLANTATION OF SODIUM-IONS

被引：0
|
作者：
ZASTAVNYI, AV
KOROL, VM
MIKHALEVA, AN
PROZOROVSKII, VD
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：580 / 582
页数：3
相关论文
共 50 条
  • [21] HALL-EFFECT INVESTIGATION OF ANNEALING OF RADIATION DEFECTS IN SILICON DOPED BY BOMBARDMENT WITH BORON IONS
    YACHMENEV, SN
    LOBOV, VA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (05): : 656 - 657
  • [22] COMMENT ON HALL-EFFECT IN PHOSPHORUS-DOPED SILICON
    DESHMUKH, VGI
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (05): : 649 - 651
  • [23] TEMPERATURE-DEPENDENCE OF THE HALL-EFFECT OF THM-GROWN HG1-XCDXTE CRYSTALS
    KIM, KM
    HAHN, SR
    NOH, SK
    PARK, HL
    CHUNG, CH
    JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 673 - 676
  • [24] TEMPERATURE-DEPENDENCE AND MAGNETIC-FIELD DEPENDENCE OF THE HALL-EFFECT IN THE HEAVY FERMION SYSTEM CECU6
    WINZER, K
    ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1986, 64 (02): : 159 - 163
  • [25] CLARIFICATION OF THE TEMPERATURE-DEPENDENCE OF THE HALL-EFFECT IN THE NORMAL STATE OF LA2-XSRXCUO4
    USHIO, H
    SCHIMIZU, T
    KAMIMURA, H
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1991, 60 (05) : 1445 - 1447
  • [26] ANOMALOUS TEMPERATURE-DEPENDENCE OF THE CORRELATED NU=1 QUANTUM HALL-EFFECT IN BILAYER ELECTRON-SYSTEMS
    LAY, TS
    SUEN, YW
    MANOHARAN, HC
    YING, X
    SANTOS, MB
    SHAYEGAN, M
    PHYSICAL REVIEW B, 1994, 50 (23): : 17725 - 17728
  • [27] TEMPERATURE-DEPENDENCE OF HALL-EFFECT AND ELECTRICAL-RESISTIVITY OF CD, ZN, AND MG SINGLE-CRYSTALS
    MELIDIS, K
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 47 (01): : K27 - K30
  • [28] HALL-EFFECT AND IMPURITY CONDUCTION IN SUBSTITUTIONALLY DOPED AMORPHOUS SILICON
    LECOMBER, PG
    JONES, DI
    SPEAR, WE
    PHILOSOPHICAL MAGAZINE, 1977, 35 (05): : 1173 - 1187
  • [29] HALL-EFFECT IN SILICON ON SAPPHIRE
    HYNECEK, J
    JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) : 2806 - 2807
  • [30] SILICON HALL-EFFECT MICROSENSOR
    ROUMENIN, CS
    KOSTOV, PT
    DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1986, 39 (05): : 63 - 66
12345