TEMPERATURE-DEPENDENCE OF THE HALL-EFFECT IN SILICON DOPED BY IMPLANTATION OF SODIUM-IONS

被引：0
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作者：
ZASTAVNYI, AV
KOROL, VM
MIKHALEVA, AN
PROZOROVSKII, VD
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来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 05期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：580 / 582
页数：3
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