CATHODOLUMINESCENCE PROPERTIES OF DIAMOND FILMS SYNTHESIZED BY MICROWAVE-PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION

被引:6
|
作者
MURANAKA, Y
YAMASHITA, H
MIYADERA, H
机构
[1] Hitachi Research Laboratory, Hitachi Ltd., Hitachi-shi, Ibaraki-ken, 319-12
关键词
D O I
10.1016/0040-6090(91)90012-M
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A variety of diamond films were synthesized in microwave plasmas of the CO-N2-H-2, CO-B(OC2H5)3-H-2, CO-H-2-Ar and CO-H-2 systems. The correlation between their crystallinities and cathodoluminescence (CL) properties led to the following conclusions. Non-doped films had twin peaks at 2.82 eV (440 nm) and near 2.3 eV (530-600 nm) which were categorized as band A luminescence. The intensity ratio I2.8/I2.3 of these twin peaks was smaller than 1. This value became larger than 1 as a result of nitrogen doping. According to scanning electron microscopy observations and X-ray diffraction analyses, nitrogen was considered to be selectively incorporated into (111) sectors. Considerations of these experimental facts in conjunction with earlier findings led to the conclusion that (100) sectors emitted high energy (blue) band A luminescence (I2.8/I2.3 > 1) and (111) sectors were responsible for low energy (green) fluorescence (I2.8/I2.3 < 1). An intense green emission was observed for a boron-doped film, which had a peak at 2.34 eV (530 nm). This emission was classified as a lower energy peak (2.2 eV) of band A luminescence. Boron-doped films exhibited green emission (2.34 eV, 530 nm) of band A luminescence five times as intense as that of non-doped films, whereas nitrogen-doped films exhibited only a little increase in the intensity of the blue emission (2.8 eV, 440 nm) of band A luminescence. The intensity of the blue emission was presumed to increase by enhanced nitrogen incorporation into (100) sectors. A sharp peak corresponding to the GR1 band was observed at 1.67 eV (741 nm) for the film synthesized in a CO-H-2-Ar system. This luminescence originated from the vacancies in the diamond film synthesized under severe bombardment of high energy electrons and ions in the argon-involving plasma. Argon addition to a CO-H-2 system suppressed the CL intensity of the synthesized diamond film which was characterized by a relatively intense red emission (GR1) at 1.67 eV (741 nm).
引用
收藏
页码:299 / 311
页数:13
相关论文
共 50 条
  • [41] (110)-ORIENTED DIAMOND FILMS SYNTHESIZED BY MICROWAVE CHEMICAL-VAPOR DEPOSITION
    KOBASHI, K
    NISHIMURA, K
    MIYATA, K
    KUMAGAI, K
    NAKAUE, A
    JOURNAL OF MATERIALS RESEARCH, 1990, 5 (11) : 2469 - 2482
  • [42] STUDY ON IV CHARACTERISTICS OF DIAMOND FILMS SYNTHESIZED BY DC ARC-DISCHARGE PLASMA CHEMICAL VAPOR-DEPOSITION
    ZHANG, FQ
    ZHANG, WJ
    CHEN, MR
    CHEN, GH
    JIANG, XL
    THIN SOLID FILMS, 1991, 205 (01) : 39 - 42
  • [43] LOW-TEMPERATURE DIAMOND DEPOSITION BY MICROWAVE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
    LIOU, Y
    INSPEKTOR, A
    WEIMER, R
    MESSIER, R
    APPLIED PHYSICS LETTERS, 1989, 55 (07) : 631 - 633
  • [44] GROWTH OF DIAMOND THIN-FILMS BY DC PLASMA CHEMICAL VAPOR-DEPOSITION
    SUZUKI, K
    SAWABE, A
    YASUDA, H
    INUZUKA, T
    APPLIED PHYSICS LETTERS, 1987, 50 (12) : 728 - 729
  • [45] THERMODYNAMIC ANALYSIS OF THE CHEMICAL VAPOR-DEPOSITION OF DIAMOND FILMS
    SOMMER, M
    MUI, K
    SMITH, FW
    SOLID STATE COMMUNICATIONS, 1989, 69 (07) : 775 - 778
  • [46] GROWTH OF DIAMOND-LIKE FILMS BY DC PLASMA CHEMICAL VAPOR-DEPOSITION
    ZHAN, RJ
    GAO, KL
    ZOU, ZP
    WANG, YX
    LIU, JZ
    XIANG, ZL
    LIU, HT
    WU, ZQ
    YE, J
    ZHOU, G
    WANG, CS
    CHINESE PHYSICS LETTERS, 1990, 7 (10): : 445 - 448
  • [47] EARLY FORMATION OF CHEMICAL VAPOR-DEPOSITION DIAMOND FILMS
    IIJIMA, S
    AIKAWA, Y
    BABA, K
    APPLIED PHYSICS LETTERS, 1990, 57 (25) : 2646 - 2648
  • [48] DIAMOND CHEMICAL VAPOR-DEPOSITION
    CELII, FG
    BUTLER, JE
    ANNUAL REVIEW OF PHYSICAL CHEMISTRY, 1991, 42 (01) : 643 - 684
  • [49] CHEMICAL VAPOR-DEPOSITION OF DIAMOND
    ANGUS, JC
    ARGOITIA, A
    GAT, R
    LI, Z
    SUNKARA, M
    WANG, L
    WANG, Y
    PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1993, 342 (1664): : 195 - 208
  • [50] CHEMICAL VAPOR-DEPOSITION OF DIAMOND
    SPEAR, KE
    FRENKLACH, M
    BADZIAN, A
    BADZIAN, T
    HARTNETT, T
    MESSIER, R
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C483 - C483