THEORY OF THE EFFECT OF A MAGNETIC FIELD ON THE ABSORPTION EDGE IN SEMICONDUCTORS

被引：48

作者：

ELLIOTT, RJ

MCLEAN, TP

MACFARLANE, GG

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1958年 / 72卷 / 466期

关键词：

D O I：

10.1088/0370-1328/72/4/310

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：553 / 565

页数：13

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