ENHANCED DIFFUSION MECHANISMS

被引：171

作者：

BOURGOIN, JC

CORBETT, JW

机构：

[1] Groupe Phys. Solides, E.N.S., Univ. Paris 7, France

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1978年 / 36卷 / 3-4期

关键词：

CRYSTALS - RADIATION DAMAGE - SEMICONDUCTOR MATERIALS;

D O I：

10.1080/00337577808240846

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

The phenomenology is reviewed for several enhanced diffusion mechanisms: the normal ionization-enhanced diffusion mechanism, the Bourgoin mechanism, the energy-release mechanism and some recoil mechanisms. Application of these mechanisms are discussed for crystalline and amorphous semiconductors, super-ionic materials and insulators in radiation damage, impurity and self-diffusion, ion-implantation, and dislocation-motion-experiments.

引用

页码：157 / 188

页数：32

共 320 条

[1]

Abdullaev A., 1975, Lattice Defects in Semiconductors, 1974, P346

[2]

AKIMCHENKO IP, 1961, SOV PHYS-SOL STATE, V2, P1891

[3]

Andersen J. U., 1971, Radiation Effects, V7, P25, DOI 10.1080/00337577108232561

[4] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J].