THERMAL AND INJECTION ANNEALING OF NEUTRON-IRRADIATED P-TYPE SILICON BETWEEN 76 DEGREES K AND 300 DEGREES K

被引：24

|

作者：

BARNES, CE

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1969年 / NS16卷 / 06期

关键词：

D O I：

10.1109/TNS.1969.4325501

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：28 / +

页数：1

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